推荐星级:
  • 1
  • 2
  • 3
  • 4
  • 5

光电耦合器PDF资料下载

更新时间:2019-12-26 09:17:42 大小:138K 上传用户:梦留香查看TA发布的资源 标签:光电耦合器 下载积分:2分 评价赚积分 (如何评价?) 收藏 评论(0) 举报

资料介绍

本文档是光电耦合器PDF资料下载电子书免费

部分文件列表

文件名 大小
光电耦合器PDF资料下载.pdf 138K

部分页面预览

(完整内容请下载后查看)
深圳市腾恩科技有限公司  
SHENZHEN TENAND TECHNOLOGY CO.,LTD  
CNY117F  
Vishay Semiconductors  
Optocoupler, Phototransistor Output,  
no Base Connection, 110 °C Rated  
FEATURES  
• Operating temperature from - 55 °C to + 110 °C  
• No base terminal connection for improved  
common mode interface immunity  
1
6
A
C
NC  
C
• Long term stability  
5
4
2
3
• Industry standard dual-in-line package  
• Lead (Pb)-free component  
NC  
E
• Component in accordance to RoHS 2002/95/EC and  
WEEE 2002/96/EC  
18216  
APPLICATIONS  
• AC adapter  
• SMPS  
DESCRIPTION  
The CNY117F is a 110 °C rated optocoupler consisting of a  
gallium arsenide infrared emitting diode optically coupled to  
a silicon planar phototransistor detector in a plastic plug-in  
DIP-6 package.  
• PLC  
• Factory automation  
• Game consoles  
The coupling device is suitable for signal transmission  
between two electrically separated circuits. The potential  
difference between the circuits to be coupled is not allowed  
to exceed the maximum permissible reference voltages.  
In contrast to the CNY117 series, the base terminal of the F  
type is not connected, resulting in a substantially improved  
common-mode interference immunity.  
AGENCY APPROVALS  
• UL1577, file no. E52744 system code H or J, double  
protection  
• DIN EN 60747-5-5  
ORDER INFORMATION  
PART  
REMARKS  
CNY117F-1  
CNY117F-2  
CNY117F-3  
CNY117F-4  
CTR 40 to 80 %, DIP-6  
CTR 63 to 125 %, DIP-6  
CTR 100 to 200 %, DIP-6  
CTR 160 to 320 %, DIP-6  
Note  
For additional information on the available options refer to option information.  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
TEST CONDITION  
SYMBOL  
VALUE  
UNIT  
INPUT  
Reverse voltage  
VR  
IF  
6.0  
60  
V
mA  
DC forward current  
Surge forward current  
Power dissipation  
Derate linearly from 25 °C  
OUTPUT  
t 10 µs  
IFSM  
Pdiss  
2.5  
100  
1.0  
A
mW  
mW/°C  
Collector emitter breakdown voltage  
BVCEO  
IC  
70  
50  
V
mA  
Collector current  
t 1.0 ms  
IC  
100  
150  
1.5  
mA  
Total power dissipation  
Pdiss  
mW  
Derate linearly from 25 °C  
mW/°C  
Document Number: 83598  
Rev. 1.4, 07-May-08  
For technical questions, contact: y.com  
207  
CNY117F  
Optocoupler, Phototransistor Output,  
no Base Connection, 110 °C Rated  
Vishay Semiconductors  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
TEST CONDITION  
SYMBOL  
VALUE  
UNIT  
COUPLER  
Isolation test voltage  
between emitter and detector referred to  
standard climate 23/50 DIN 50014  
VISO  
5300  
VRMS  
Creepage  
Clearance  
7.0  
7.0  
mm  
mm  
Isolation thickness between  
emitter and detector  
0.4  
mm  
Comparative tracking index  
per DIN IEC 112/VDE 0303, part 1  
175  
Isolation resistance  
V
IO = 500 V  
RIO  
Tstg  
1011  
Ω
Storage temperature range  
Ambient temperature range  
- 55 to + 150  
- 55 to + 110  
°C  
°C  
Tamb  
max. 10 s, dip soldering: distance to  
Soldering temperature  
Tsld  
260  
°C  
seating plane 1.5 mm  
Note  
amb = 25 °C, unless otherwise specified.  
T
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied  
at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for  
extended periods of the time can adversely affect reliability.  
ELECTRICAL CHARACTERISTCS  
PARAMETER  
TEST CONDITION  
PART  
SYMBOL  
MIN.  
TYP.  
MAX.  
1.65  
10  
UNIT  
INPUT  
Forward voltage  
Breakdown voltage  
Reverse current  
Capacitance  
IF = 60 mA  
VF  
VBR  
IR  
1.25  
V
V
I
R = 10 µA  
R = 6.0 V  
R = 0 V, f = 1.0 MHz  
6.0  
V
0.01  
25  
µA  
pF  
V
CO  
OUTPUT  
Collector emitter capacitance  
Base collector capacitance  
Emitter base capacitance  
COUPLER  
V
V
CE = 5.0 V, f = 1.0 MHz  
CE = 5.0 V, f = 1.0 MHz  
CCE  
CBC  
CEB  
5.2  
6.5  
7.5  
pF  
pF  
pF  
VCE = 5.0 V, f = 1.0 MHz  
Collector emitter, saturation voltage IF = 10 mA, IC = 2.5 mA  
Coupling capacitance  
VCEsat  
CC  
0.25  
0.6  
2.0  
2.0  
5.0  
5.0  
0.4  
V
pF  
nA  
nA  
nA  
nA  
CNY117F-1  
CNY117F-2  
CNY117F-3  
CNY117F-4  
ICEO  
ICEO  
ICEO  
ICEO  
50  
50  
Collector emitter, leakage current  
VCE = 10 V  
100  
100  
Note  
Tamb = 25 °C, unless otherwise specified.  
Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering  
evaluations. Typical values are for information only and are not part of the testing requirements.  
208  
For technical questions, contact: y.com  
Document Number: 83598  
Rev. 1.4, 07-May-08  

全部评论(0)

暂无评论