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基于M57962AL芯片的大功率IGBT驱动与保护设计
资料介绍
根据大功率绝缘栅双极型晶体管(IGBT)对驱动电路和保护的要求,提出一种基于M57962AL的实用型大功率IGBT驱动电路及其保护的设计方案,该设计方案选取IGBT输出特性曲线的拐点作为短路保护阈值点,可有效防止误保护。以FF1200R17KE3_B2为例,根据提出的设计方案设计合适的驱动参数、保护参数及外围电路。通过短路保护测试及大功率实验结果验证该驱动电路具有良好的驱动和保护能力。
According to requirement of drive and protection circuit for high-power insulated gate bipolar transistor(IGBT), the design of drive and protection circuit for high-power IGBT which based on M57962AL is proposed.This design selects turning-point of output characteristic curve of IGBT as the threshold of short circuit protection,which can avoid fault of protection effectively.Based on the design scheme,the drive and protection circuit for FF12OOR17KE3_B2 is proposed.All of the excellent functions are validated by short circuit protection test and the high-power experiment.
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文件名 | 大小 |
基于M57962AL芯片的大功率IGBT驱动与保护设计.pdf | 383K |
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