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E-PHEMT微波宽带放大器的静电防护电路设计
资料介绍
为提升 E-PHEMT微波宽带放大器的抗静电能力，在分析放大器3个端口电路结构的基础上，兼顾静电保护效果、电路尺寸、微波特性与被保护电路的有机结合，提出基于PIN二极管作为基本组成元件的微波宽带放大器静电保护电路的设计方法和思路，并研制出实物样品．通过试验对比放大器改进前后的电性能和抗静电能力，其结果表明：改进后样品的微波特性满足规范要求、抗静电能力由500 V提高到2000 V．该设计方法和思路在保障放大器电特性的基础上，提升了放大器的抗静电能力．
On the basis of analyzing the structure of E-HEMT microwave wideband amplifier’s three ports,this paper proposes the method of designing electrostatic discharge（ESD）protection circuit for microwave wideband amplifier using PIN diode as basic component of protection circuit,meanwhile considering the organic combination of ESD protection effect,circuit size and microwave performance and the circuit under protection in order to improve the amplifier’s anti-electrostatic ability.A sample circuit has been produced.The amplifier＇s electric performance and anti-electrostatic ability before the improvement and those after the improvement are compared through experiments whose results indicate that the amplifier’s anti-el...
部分文件列表
| 文件名 | 大小 |
| E-PHEMT微波宽带放大器的静电防护电路设计.pdf | 247K |
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