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基于新型延迟电路的CMOS片上温度传感器
资料介绍
为在较大温度范围内实现高精度的片上温度检测,提出一种基于新型延迟电路的CMOS时域温度传感器。该传感器以新型延迟电路为基础,利用二极管连接的双极结型晶体管（BJT）生成PWM信号,相较于其它时域温度传感器,仅需要单一偏置电流以及比较器就可生成PWM信号;利用简易的数字计数器可确定占空比,且占空比会被转换成数字值;传感器设计采用了0.18μm CMOS技术。实际测试结果显示,相较于其它类似传感器,提出的传感器在较宽的温度范围内精确度较高;在两个温度点上进行数字校准之后,在0~125℃范围内的精确度为±0.1℃;电源为1.5 V时,此传感器仅消耗了2.48μA,功耗为3.8μW。
In order to realize high precision on-chip temperature detection, a CMOS time domain temperature sensor based on novel delay circuit is proposed. The sensor is based on a novel delay circuit, the PWM signal is generated by the diode connected bipolar junction transistor（BJT）, and the PWM signal is generated by a single bias current and a comparator. A simple digital counter can be used to determine the duty cycle, and the duty cycle can be converted into a digital value. The sensor is designed with 0.18 CMOS M technology. The test results show that the accuracy of the proposed sensor is higher than that of other similar sensors in a wide temperature ...
部分文件列表
| 文件名 | 大小 |
| 基于新型延迟电路的CMOS片上温度传感器.pdf | 926K |
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