such devices. In this paper, only the phase relection property hexahedral mesh discretization. This technique reveals to be a
is considered but all these approaches can be used to predict highly efficient method as it combines easy-to-use cartesian
the absorption coefficient [6]. All the results are compared and grids without any approximation of the structure geometry
validated to measurement done in a waveguide simulator [7]. [8]. The PBA can improve the geometry description without
increasing the memory. As illustrated in Fig. 2, the hexahedral
mesh grid is applied to the structure with a denser mesh near
II. OVERVIEW OF THE DIFFERENT APPROACHES
The reflection property of high impedance surfaces is gen-
erally described by the reflection coefficient which is the ratio
of the reflected field on the incident field at the top of the
structure.
the edges of the PEC sheet for a better ElectroMagnetic (EM)
field discretization. In CST MWS, several methods can be used
to simulate the reflection phase in normal incidence. Firstly
the analytical expression (1) can be computed in a Visual
Basic language for Application (VBA) which requires three
simulations in that case: one for extracting the incident field
components without any parasitic reflection in the calculation
domain, the second one to take into account the modified E-
field components reflected at an equivalent PEC reference and
the last one to deduce the phase shift created by the real case.
An Electric Probe is required to record the time signals for all
the three simulations. This method can be used to simulate
the reflection phase diagram of finite structure. However,
this method requires few minutes to simulate the reflection
coefficient of the real structure [9]. Another method is used,
consisting in defining the appropriate boundary conditions to
introduce a crossed-E and H-field such that a TEM wave is
applied similar to a plane wave considering one single element
as infinitely periodic in the x and y directions. The reflection
phase diagram is then computed for normal incidence of the
ElectroMagnetic (EM) field propagation. The phase reference
Zs − Z0
Γ =
(1)
Zs + Z0
Where Zs and Z0 are respectively the surface impedance
of the structure and the free space impedance. For a perfect
electric ground plane, the reflected E-field and the incident E-
field have opposite signs, resulting in a coefficient reflection
equal to -1. In the case of a hypothetically PMC surface,
the reflection phase is null corresponding to a coefficient
reflection equal to +1. However, HIS reveals that they can
realize the PMC condition in a certain frequency band. At very
low frequency, the HIS behaves like a PEC. At the resonant
frequency, the impedance of the structure tends to infinity,
resulting in a zero reflection phase. To calculate the reflection
phase of an high impedance surface, a plane wave illuminating
the structure where a PEC surface is set as a reference leads
to a normalization of the reflected phase of the HIS (ΦHIS
from the PEC surface (ΦP EC):
)
Φ = ΦHIS − ΦP EC + π
(2)
A surface impedance is comprised of metallic square
patches printed on the top of a metal backed dielectric sub-
strate without vias (see Fig.1a). According to Fig. 1a, the
parameters of the high impedance surface analyzed are: P =
4mm, g = 0.4mm, h = 1mm and ꢀr = 10.2. Where P is the
periodicity of the patch array, g is the gap between adjacent
patches, h the height of the dielectric substrate and ꢀr the
relative permittivity of the host medium. As the HIS is a
periodic structure, only one lattice is needed to discribe the
behaviour of the whole structure. With the periodic boundary
conditions used, the structure can be modelled as an infinite
surface (see Fig. 1b).
(a)
A. The Time Domain
All time domain ”Full-Wave” methods such as FIT, FDTD
and TLM techniques use a conformal cartesian grid. Whereas
the FDTD approach uses the hexahedral mesh grid, this dis-
cretization has some limitations when complex 3D-structures
have to be simulated at higher frequency range for which the
level of accuracy has to be enhanced. For a better geometry
discretization, mainly thin structures, rounded solids and shell
objects, the PBA was implemented in connection with the FIT
to reduce the global number of mesh cells of an equivalent
FDTD simulation for a considerable enhanced level of ac-
curacy. For instance, that means that a mesh cell can take
(b)
Fig. 2. Hexahedral discretization of the lattice: (a) Front view, (b) Perspective
into account two different material properties in the global view
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