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Ultra Low On-Resistance MOS管 IRLR2905
资料介绍
Ultra Low On-Resistance MOS管
部分文件列表
| 文件名 | 大小 |
| IRLR2905.pdf | 136K |
部分页面预览
（完整内容请下载后查看）PD- 91334E
IRLR/U2905
HEXFET® Power MOSFET
l Logic-Level Gate Drive
l Ultra Low On-Resistance
l Surface Mount (IRLR2905)
l Straight Lead (IRLU2905)
l Advanced Process Technology
l Fast Switching
D
VDSS = 55V
RDS(on) = 0.027Ω
G
ID = 42Aꢀ
S
l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve the lowest possible on-resistance per
silicon area. This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs are well known for,
provides the designer with an extremely efficient device for use in a wide
variety of applications.
D-Pak
T O -252AA
I-Pak
TO -251AA
The D-PAK is designed for surface mounting using vapor phase, infrared, or
wave soldering techniques. The straight lead version (IRFU series) is for
through-hole mounting applications. Power dissipation levels up to 1.5 watts
are possible in typical surface mount applications.
Absolute Maximum Ratings
Parameter
Max.
42 ꢀ
30
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
A
160
110
0.71
± 16
210
25
PD @TC = 25°C
PowerDissipation
W
W/°C
V
LinearDeratingFactor
VGS
EAS
IAR
Gate-to-SourceVoltage
Single Pulse Avalanche Energy
AvalancheCurrent
mJ
A
EAR
dv/dt
TJ
RepetitiveAvalancheEnergy
Peak Diode Recovery dv/dt
OperatingJunctionand
11
mJ
V/ns
5.0
-55 to + 175
TSTG
StorageTemperatureRange
SolderingTemperature, for10seconds
°C
300 (1.6mm from case )
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
Max.
1.4
50
Units
RθJC
RθJA
RθJA
Case-to-Ambient(PCBmount)**
Junction-to-Ambient
–––
°C/W
–––
110
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
www.irf.com
1
12/8/00
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