积分商城

最新搜索： PL2303 altium Designer 20 电路设计与仿真从入门到精通 auto cad 常用LOGO标识 microBUCK TMC5160
您现在的位置是：首页 > 手册 > Ultra Low On-Resistance MOS管 IRLR2905
推荐星级：
  • 1
  • 2
  • 3
  • 4
  • 5

Ultra Low On-Resistance MOS管 IRLR2905

更新时间：2019-09-26 10:16:05 大小：136K 上传用户：月如规查看TA发布的资源 标签：MOS管 下载积分：2分 评价赚积分 （如何评价?） 打赏 收藏 评论(0) 举报

资料介绍

Ultra Low On-Resistance MOS管    

部分文件列表

文件名 大小
IRLR2905.pdf 136K

【关注视频号领20积分】   【关注公众号立即送20积分】

部分页面预览

（完整内容请下载后查看）
PD- 91334E  
IRLR/U2905  
HEXFET® Power MOSFET  
l Logic-Level Gate Drive  
l Ultra Low On-Resistance  
l Surface Mount (IRLR2905)  
l Straight Lead (IRLU2905)  
l Advanced Process Technology  
l Fast Switching  
D
VDSS = 55V  
RDS(on) = 0.027Ω  
G
ID = 42Aꢀ  
S
l Fully Avalanche Rated  
Description  
Fifth Generation HEXFETs from International Rectifier utilize advanced  
processing techniques to achieve the lowest possible on-resistance per  
silicon area. This benefit, combined with the fast switching speed and  
ruggedized device design that HEXFET Power MOSFETs are well known for,  
provides the designer with an extremely efficient device for use in a wide  
variety of applications.  
D-Pak  
T O -252AA  
I-Pak  
TO -251AA  
The D-PAK is designed for surface mounting using vapor phase, infrared, or  
wave soldering techniques. The straight lead version (IRFU series) is for  
through-hole mounting applications. Power dissipation levels up to 1.5 watts  
are possible in typical surface mount applications.  
Absolute Maximum Ratings  
Parameter  
Max.  
42 ꢀ  
30  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current   
A
160  
110  
0.71  
± 16  
210  
25  
PD @TC = 25°C  
PowerDissipation  
W
W/°C  
V
LinearDeratingFactor  
VGS  
EAS  
IAR  
Gate-to-SourceVoltage  
Single Pulse Avalanche Energy‚  
AvalancheCurrent  
mJ  
A
EAR  
dv/dt  
TJ  
RepetitiveAvalancheEnergy  
Peak Diode Recovery dv/dt ƒ  
OperatingJunctionand  
11  
mJ  
V/ns  
5.0  
-55 to + 175  
TSTG  
StorageTemperatureRange  
SolderingTemperature, for10seconds  
°C  
300 (1.6mm from case )  
Thermal Resistance  
Parameter  
Junction-to-Case  
Typ.  
–––  
Max.  
1.4  
50  
Units  
RθJC  
RθJA  
RθJA  
Case-to-Ambient(PCBmount)**  
Junction-to-Ambient  
–––  
°C/W  
–––  
110  
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .  
For recommended footprint and soldering techniques refer to application note #AN-994  
www.irf.com  
1
12/8/00  

相关下载

全部评论(0)

暂无评论
评论赚积分>>

上传资源 上传优质资源有赏金

热门标签

更多>>

最新上传

  • 打赏
  • 30日榜单

热门下载

推荐下载

本站上的所有资源均为源于网上收集或者由用户自行上传，仅供学习和研究使用，无任何商业目的，版权归原作如有侵权，请 来信指出，本站将立即改正。

ICP许可证号：京ICP证070360号     21IC电子网 2000- 版权所有

京ICP备11013301号

京公网安备 11010802024343号