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IGBT的MATLAB仿真
资料介绍
Implement insulated gate bipolar transistor (IGBT)
实现绝缘栅双极型晶体管
Library
Fundamental Blocks/Power Electronics
Description
The IGBT block implements a semiconductor device controllable by the gate signal. The IGBTis
simulated as a series combination of a resistor Ron, inductor Lon, and a DCvoltage source Vf in
series with a switch controlled by a logical signal (g > 0 or g = 0)
IGBT模块是一个由门信号控制的半导体元器件。IGBT可以视作一个电阻一个电感一个直
流电压源一个门信号控制的开关串联
The IGBT turns on when the collector-emitter voltage is positive and greater than Vf and a
positive signal is applied at the gate input (g > 0). It turns off when the collector-emitter voltage is
positive and a 0 signal is applied at the gate input (g = 0).
当集电极与发射极间的电压正偏并且大于Vf ,而且存在门信号(g > 0),IGBT打开。当集电
极与发射极间的电压正偏门信号为0(g = 0),其关闭。
The IGBTdevice is in the off state when the collector-emitter voltage is negative. Note that many
commercial IGBTsdo not have the reverse blocking capability. Therefore, they are usually used
with an antiparallel diode.
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文件名 | 大小 |
IGBT的MATLAB仿真.pdf | 788K |
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2022-12-05 20:03:31xiong325
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