GaN功率集成电路技术_过去 现在和未来

• An alternative to full monolithic power IC integration: • Select GaN transistors from a source wafer to provide high voltage and/or high frequency capability • Using a designed stamp, pick the devices on an interval that matches the size of the target IC. • Transfer and release to form the power GaN on CMOS chip on chip R. Lerner, S. Eisenbrandt, C. Bower, S. Bonafede, A. Fecioru, R. Reiner, P. Waltereit, “ Integration of GaNHEMTs onto Silicon CMOS A Demonstration of Half Bridge Integration • In order to suppress current collapse, the chip substrate is connected to a passive network formed by the RDIV divider and the chip capacitance that causes it to closely follow the switch node. Navitas GaN Power IC • Monolithic integration • 10X lower drive loss than silicon • Driver impedance matched to power device • Short prop delay (10ns) • Zero inductance turn-off loop • Digital input (hysteretic) • Rail-rail drive output • Reduces layout sensitivity Speed & Integration  Eliminate Turn-off Losses 23 Load Current (A) External drivers • Just 1-2 nH of gate loop inductance can cause unintended turn-on • Gate resistors reduce spikes but create additional losses Integrated GaN drivers (iDrive™) • Eliminate the problem • Negligible turn-off losses GaN Power IC: High-Speed FET, Drivers & More • Monolithic integration of GaN FET, GaN Driver, GaN Logic • 650 V eMode power device • 10x lower drive loss than silicon (<35 mW at 1 MHz) • Driver impedance matched to power device • Very fast (prop delay including turn-on/off 10ns) • Zero inductance turn-off loop • High dV/dt immunity (200 V/ns) • Regulated gate voltage • Controllable turn-on dV/dt • Digital input Taking GaN Beyond JEDEC & Industry Norms • GaNSPEC DWG • GaN Standards for Power Electronic Conversion Devices Working Group • Broad industry cooperation • Defining new standards and guidelines for GaN quality & reliability • Test methods • Reliability & qualification procedures • Datasheet parameters Power Electronics: Speed & Efficiency are Key • Speed enables small size, low-cost and faster charging • Efficiency enables energy savings • With Silicon or Discrete GaN power devices, you can get one or the other • With GaN power ICs, you get both at the same time with unequaled Speed & Efficiency What’s Left to Work on? • A good P-channel for CMOS • High density digital • Memory (volatile, non-volatile, OTP, MTP, etc.) • ICs rated for temperatures > 150C • A full expansion of the cell library • A process design kit Summary • GaN Power ICs set new standards for ease-of-use, speed, efficiency, density, & system cost • Proven technology, ready for commercial use • Best technology, for 90-305 VAC off-line applications, 25W to 5kW • GaN Power ICs + high-frequency magnetics + new controllers = A bright future of rapid advancement in the power electronics industry