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基于TSV技术的3D电感的设计与实现
资料介绍
随着集成电路集成度越来越高,传统的2D片上电感损耗高、占位面积大等缺点日益明显,无法满足3D集成的要求,因此提出了一种基于硅通孔（TSV）技术的新型螺旋3D电感。首先介绍了新型电感的结构,并进行了损耗机理的分析,通过仿真数据研究了基于TSV的3D电感的可行性,最后制作了实物并进行测试。测试结果表明,基于TSV的3D电感Q值在2.55 GHz达到峰值25左右,电感值在3 GHz内可以稳定在4 n H左右,自谐振频率为6 GHz左右。实现了高Q值、低占位面积的目标。
With the increasing integration of integrated circuits,traditional 2 D on-chip inductors have defects such as high loss and large footprint,which can not meet the requirements of 3 D integration. Therefore,a novel spiral 3 D inductor based on though silicon via（ TSV） technology was proposed. Firstly,the structure of the novel inductor was introduced,and the loss mechanism was analyzed. Secondly,the feasibility of the 3 D inductor based on TSV was studied through simulation data. Finally,the physical object was produced and tested. The test results showthat the highest quality factor of 3 D inductor based on TSV reaches about 25 at 2. 55 GHz,the inductance can be stabilized at about 4 nH within 3 GHz,and the...
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| 文件名 | 大小 |
| 基于TSV技术的3D电感的设计与实现.pdf | 1M |
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