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SiPM核辐射探测器电路设计
资料介绍
本文研究基于硅光电倍增管（SiPM）和塑料闪烁体的核辐射探测器电路，设计了适用于SiPM电压偏置电路和信号放大电路，并测试了电路的相关参数：电压偏置电路噪声在5mV以下，放大电路输出信号幅度可达伏级，带宽约为80MHz，最大信噪比在50db左右，四路探测器总功率为0．84W，符合项目设计要求。
In this paper, some circuits were designed for nuclear radiation detector based on Silicon photomuhi- plier（SiPM） and plastic scintillator. Voltage bias circuit and signal amplifying circuit for SiPM are designed. The relative performance of these circuits are tested ： the noise of voltage bias circuit is below 5mV, the ampli- tude of signal waveform can reach a few volts, the bandwidth of amplification circuit is about 80MHz, the maxi- mum SNR is about 50db, the total power of four detectors is 0.84W. All these meet the requirements of the project design.
部分文件列表
| 文件名 | 大小 |
| SiPM核辐射探测器电路设计.pdf | 893K |
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