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芯片内部多温度点最高温度监测预警电路设计

更新时间:2020-10-25 21:44:59 大小:1M 上传用户:gsy幸运查看TA发布的资源 标签:温度监测预警 下载积分:1分 评价赚积分 (如何评价?) 收藏 评论(0) 举报

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这是一种基于TSMC 0.13μm CMOS工艺制作的用于芯片内部的多个温度点中最高温度监测与预警的模拟集成电路。分析了电路的工作原理与电路的设计结构。电路采用PTAT电流电路、带隙基准电路、电流选择与电压比较电路等结构,以实现多温度点中最高温度的监测与预警功能。Cadence Spectre电路仿真结果表明,该电路PTAT电流温度系数为3.323×10-8 A/℃,带隙基准温度系数为9 ppm,并且可以正常实现最高温度的监测预警功能。

An analog integrated circuit based on TSMC 0.13μm CMOS process for monitoring and alerting the highest temperature in multiple temperature points on chip is introduced in this paper.This paper analyses the working principle and design structure of the circuit.The PTAT current circuit,band gap reference circuit,current selection and voltage comparison circuit are used to realize the function of monitoring and alerting the highest temperature in multiple temperature points.The circuit simulation results of Cadence Spectre show that the temperature coefficient of the PTAT current circuit is 3.323×10^-8 A/℃,the temperature coefficient of the band gap reference circuit is 9 ppm,and the function of monitoring and alerting the highest temperature can be realized normally.

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