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一种高压驱动集成电路的失效机理分析
资料介绍
针对一种高压驱动芯片的失效问题,本文分析了其失效机理,主要通过电性能分析、光学显微镜分析、透射射线分析和开盖检查等分析手段,定位了该集成电路的失效点和失效机理,并通过复现试验确认了驱动芯片失效的原因。输入端的高能量外部过电应力(EOS)过流与过热,使晶圆内部线路发生熔化,造成驱动芯片的输入端和电源正极短路,引发器件失效。
Aiming at the failure problem of a high voltage driver chip, this paper analyzed its failure mechanism, and located the failure point and failure mechanism of the integrated circuit mainly through electrical performance analy. sis, optical microscope analysis, transmission ray analysis and open cover inspection, and confirmed the cause of the failure of the driver chip by the recurrence test. The high-energy external over-current stress (EOS) overcurrent and over-heat at the input end melts the internal wiring of the wafer, causing the input terminal of the driver chip and the positive terminal of the power supply to be short-circuited, causing device failure.
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| 文件名 | 大小 |
| 一种高压驱动集成电路的失效机理分析.pdf | 2M |
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