积分商城

最新搜索： RFID SDK 应用分析精粹 编译软件 变送器 环路补偿
您现在的位置是：首页 > 手册 > MOS芯片 AO4606 datasheet
推荐星级：
  • 1
  • 2
  • 3
  • 4
  • 5

MOS芯片 AO4606 datasheet

更新时间：2019-12-18 19:26:49 大小：431K 上传用户：chenjiemin1234查看TA发布的资源 标签：AO4606场效应晶体管 下载积分：2分 评价赚积分 （如何评价?） 打赏 收藏 评论(0) 举报

资料介绍

分享一个MOS芯片，AO4606 datasheet,

部分文件列表

文件名 大小
AO4606.pdf 431K

【关注视频号领20积分】   【关注公众号立即送20积分】

部分页面预览

（完整内容请下载后查看）
Feb 2003  
AO4606  
Complementary Enhancement Mode Field Effect Transistor  
General Description  
Features  
n-channel  
VDS (V) = 30V  
ID = 6.9A  
p-channel  
-30V  
The AO4606 uses advanced trench  
technology MOSFETs to provide excellent  
RDS(ON) and low gate charge. The  
complementary MOSFETs may be used  
to form a level shifted high side switch,  
and for a host of other applications.  
-6A  
RDS(ON)  
RDS(ON)  
< 28mΩ (VGS=10V)  
< 42mΩ (VGS=4.5V)  
< 35mΩ (VGS = 10V)  
< 58mΩ (VGS = 4.5V)  
D1  
D2  
1
2
3
4
8
7
6
5
S2  
G2  
S1  
G1  
D2  
D2  
D1  
D1  
G1  
G2  
S1  
S2  
SOIC-8  
p-channel  
n-channel  
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Max n-channel  
Max p-channel  
Units  
V
V
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
30  
±20  
-30  
VGS  
±20  
TA=25°C  
TA=70°C  
6.9  
5.8  
30  
-6  
-5  
-30  
Continuous Drain  
Current A  
A
ID  
IDM  
Pulsed Drain Current B  
TA=25°C  
TA=70°C  
2
2
1.44  
-55 to 150  
PD  
W
Power Dissipation  
1.44  
-55 to 150  
TJ, TSTG  
Junction and Storage Temperature Range  
°C  
Thermal Characteristics: n-channel and p-channel  
Parameter  
Symbol  
Device  
Typ  
48  
74  
35  
48  
74  
35  
Max Units  
62.5 °C/W  
110 °C/W  
60 °C/W  
62.5 °C/W  
110 °C/W  
40 °C/W  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Lead C  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Lead C  
n-ch  
n-ch  
n-ch  
p-ch  
p-ch  
p-ch  
t ≤ 10s  
RθJA  
Steady-State  
Steady-State  
t ≤ 10s  
Steady-State  
Steady-State  
RθJL  
RθJA  
RθJL  
Alpha & Omega Semiconductor, Ltd.  
AO4606  
N-Channel Electrical Characteristics (T=25°C unless otherwise noted)  
J
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max Units  
STATIC PARAMETERS  
BVDSS  
Drain-Source Breakdown Voltage  
ID=250µA, VGS=0V  
30  
V
VDS=24V, VGS=0V  
1
5
IDSS  
Zero Gate Voltage Drain Current  
µA  
TJ=55°C  
IGSS  
VGS(th)  
ID(ON)  
Gate-Body leakage current  
Gate Threshold Voltage  
On state drain current  
VDS=0V, VGS=±20V  
VDS=VGS ID=250µA  
VGS=4.5V, VDS=5V  
100  
3
nA  
V
A
1
20  
1.9  
V
GS=10V, ID=6.9A  
22.5  
31.3  
34.5  
15.4  
0.76  
28  
38  
42  
mΩ  
mΩ  
S
V
A
RDS(ON)  
TJ=125°C  
Static Drain-Source On-Resistance  
VGS=4.5V, ID=5.0A  
DS=5V, ID=6.9A  
IS=1A  
gFS  
VSD  
IS  
Forward Transconductance  
Diode Forward Voltage  
V
10  
1
3
Maximum Body-Diode Continuous Current  
DYNAMIC PARAMETERS  
Ciss  
Coss  
Crss  
Rg  
Input Capacitance  
680  
102  
77  
pF  
pF  
pF  
Ω
VGS=0V, VDS=15V, f=1MHz  
Output Capacitance  
Reverse Transfer Capacitance  
Gate resistance  
VGS=0V, VDS=0V, f=1MHz  
3
SWITCHING PARAMETERS  
Qg(10V)  
Qg(4.5V)  
Qgs  
Total Gate Charge  
Total Gate Charge  
Gate Source Charge  
Gate Drain Charge  
Turn-On DelayTime  
Turn-On Rise Time  
Turn-Off DelayTime  
Turn-Off Fall Time  
13.84  
6.74  
1.82  
3.2  
4.6  
4.1  
nC  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
VGS=10V, VDS=15V, ID=6.9A  
Qgd  
tD(on)  
tr  
tD(off)  
tf  
VGS=10V, VDS=15V, RL=2.2Ω,  
R
GEN=3Ω  
20.6  
5.2  
trr  
Qrr  
IF=6.9A, dI/dt=100A/µs  
IF=6.9A, dI/dt=100A/µs  
16.5  
7.8  
Body Diode Reverse Recovery Time  
Body Diode Reverse Recovery Charge  
ns  
nC  
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value  
in any a given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating.  
B: Repetitive rating, pulse width limited by junction temperature.  
C. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.  
D. The static characteristics in Figures 1 to 6 are obtained using 80µs pulses, duty cycle 0.5% max.  
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA  
curve provides a single pulse rating.  
Alpha & Omega Semiconductor, Ltd.  

相关下载

全部评论(0)

暂无评论
评论赚积分>>

上传资源 上传优质资源有赏金

热门标签

更多>>

最新上传

  • 打赏
  • 30日榜单

热门下载

推荐下载

本站上的所有资源均为源于网上收集或者由用户自行上传，仅供学习和研究使用，无任何商业目的，版权归原作如有侵权，请 来信指出，本站将立即改正。

ICP许可证号：京ICP证070360号     21IC电子网 2000- 版权所有

京ICP备11013301号

京公网安备 11010802024343号