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MOS芯片 AO4606 datasheet
资料介绍
分享一个MOS芯片，AO4606 datasheet,
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| 文件名 | 大小 |
| AO4606.pdf | 431K |
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（完整内容请下载后查看）Feb 2003
AO4606
Complementary Enhancement Mode Field Effect Transistor
General Description
Features
n-channel
VDS (V) = 30V
ID = 6.9A
p-channel
-30V
The AO4606 uses advanced trench
RDS(ON) and low gate charge. The
complementary MOSFETs may be used
to form a level shifted high side switch,
and for a host of other applications.
-6A
RDS(ON)
RDS(ON)
< 28mΩ (VGS=10V)
< 42mΩ (VGS=4.5V)
< 35mΩ (VGS = 10V)
< 58mΩ (VGS = 4.5V)
D1
D2
1
2
3
4
8
7
6
5
S2
G2
S1
G1
D2
D2
D1
D1
G1
G2
S1
S2
SOIC-8
p-channel
n-channel
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Max p-channel
Units
V
V
VDS
Drain-Source Voltage
Gate-Source Voltage
30
±20
-30
VGS
±20
TA=25°C
TA=70°C
6.9
5.8
30
-6
-5
-30
Continuous Drain
Current A
A
ID
IDM
Pulsed Drain Current B
TA=25°C
TA=70°C
2
2
1.44
-55 to 150
PD
W
Power Dissipation
1.44
-55 to 150
TJ, TSTG
Junction and Storage Temperature Range
°C
Thermal Characteristics: n-channel and p-channel
Parameter
Symbol
Device
Typ
48
74
35
48
74
35
Max Units
62.5 °C/W
110 °C/W
60 °C/W
62.5 °C/W
110 °C/W
40 °C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
n-ch
n-ch
n-ch
p-ch
p-ch
p-ch
t ≤ 10s
RθJA
Steady-State
Steady-State
t ≤ 10s
Steady-State
Steady-State
RθJL
RθJA
RθJL
Alpha & Omega Semiconductor, Ltd.
AO4606
N-Channel Electrical Characteristics (T=25°C unless otherwise noted)
J
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
30
V
VDS=24V, VGS=0V
1
5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
IGSS
VGS(th)
ID(ON)
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS=±20V
VDS=VGS ID=250µA
VGS=4.5V, VDS=5V
100
3
nA
V
A
1
20
1.9
V
GS=10V, ID=6.9A
22.5
31.3
34.5
15.4
0.76
28
38
42
mΩ
mΩ
S
V
A
RDS(ON)
TJ=125°C
Static Drain-Source On-Resistance
VGS=4.5V, ID=5.0A
DS=5V, ID=6.9A
IS=1A
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
V
10
1
3
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
680
102
77
pF
pF
pF
Ω
VGS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
3
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Qgs
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
13.84
6.74
1.82
3.2
4.6
4.1
nC
nC
nC
nC
ns
ns
ns
ns
VGS=10V, VDS=15V, ID=6.9A
Qgd
tD(on)
tr
tD(off)
tf
VGS=10V, VDS=15V, RL=2.2Ω,
R
GEN=3Ω
20.6
5.2
trr
Qrr
IF=6.9A, dI/dt=100A/µs
IF=6.9A, dI/dt=100A/µs
16.5
7.8
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value
in any a given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
Alpha & Omega Semiconductor, Ltd.
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