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大功率MOS BUK7J1R4-40H 手册
资料介绍
buk7j1r4大功率MOS，用于汽车电子。
Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction technology, housed in an enhanced LFPAK56E package. This product has been fully designed and qualified to meet AEC-Q101 requirements delivering high performance and endurance.
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（完整内容请下载后查看）BUK7J1R4-40H
N-channel 40 V, 1.4 mΩ standard level MOSFET in LFPAK56E
5 July 2018
Product data sheet
1. General description
Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction
technology, housed in an enhanced LFPAK56E package. This product has been fully designed and
qualified to meet AEC-Q101 requirements delivering high performance and endurance.
2. Features and benefits
•
Fully automotive qualified to AEC-Q101:
175 °C rating suitable for thermally demanding environments
Trench 9 Superjunction technology:
•
•
•
Reduced cell pitch enables enhanced power density and efficiency with lower RDSon in
same footprint
•
•
Improved SOA and avalanche capability compared to standard TrenchMOS
Tight VGS(th) limits enable easy paralleling of MOSFETs
•
LFPAK Gull Wing leads:
•
High Board Level Reliability absorbing mechanical stress during thermal cycling, unlike
traditional QFN packages
•
•
Visual (AOI) soldering inspection, no need for expensive x-ray equipment
Easy solder wetting for good mechanical solder joint
•
LFPAK copper clip technology:
•
•
Improved reliability, with reduced Rth and RDSon
Increases maximum current capability and improved current spreading
3. Applications
•
•
•
•
•
12 V automotive systems
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power switching
4. Quick reference data
Table 1. Quick reference data
Symbol
VDS
Parameter
Conditions
Min
Typ
Max
40
Unit
V
drain-source voltage
drain current
25 °C ≤ Tj ≤ 175 °C
VGS = 10 V; Tmb = 25 °C;
-
-
-
-
-
-
ID
190
395
A
Ptot
total power dissipation Tmb = 25 °C;
W
Nexperia
BUK7J1R4-40H
N-channel 40 V, 1.4 mΩ standard level MOSFET in LFPAK56E
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
RDSon drain-source on-state
resistance
Dynamic characteristics
VGS = 10 V; ID = 25 A; Tj = 25 °C;
0.74
1.06
1.4
mΩ
QGD
gate-drain charge
ID = 25 A; VDS = 32 V; VGS = 10 V;
;
-
13
27
nC
nC
Source-drain diode
Qr
recovered charge
IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 20 V
-
-
39
-
-
S
softness factor
IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 20 V; Tj = 25 °C
0.7
[1] 190A continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB,
thermal design and operating temperature.
5. Pinning information
Table 2. Pinning information
Pin
1
Symbol Description
Simplified outline
Graphic symbol
S
S
S
G
D
source
source
source
gate
D
S
2
G
3
4
mbb076
mb
mounting base; connected to
drain
1
2
3
4
LFPAK56E; Power-
SO8 (SOT1023)
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
Version
BUK7J1R4-40H
LFPAK56E;
Power-SO8
plastic, single-ended surface-mounted package (LFPAK56); 4
leads; 1.27 mm pitch
SOT1023
7. Marking
Table 4. Marking codes
Type number
Marking code
BUK7J1R4-40H
71H440
©
BUK7J1R4-40H
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2018. All rights reserved
Product data sheet
5 July 2018
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