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ESD PTVSHC1DF7VB 手册

更新时间:2019-12-09 12:25:23 大小:164K 上传用户:soniqec查看TA发布的资源 标签:esd 下载积分:2分 评价赚积分 (如何评价?) 打赏 收藏 评论(0) 举报

资料介绍

TVS保护器件,用于保护电源接口的雷击浪涌保护,可以达到400V保护

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PTVSHC1DF7VB.pdf 164K

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PTVSHC1DF7VB  
ESD Protector  
Description  
The PTVSHC1DF7VB ESD protector is designed to replace multilayer varistors (MLVs) in  
portable applications such as cell phones, notebook computers, and PDA’s. They feature  
large cross-sectional area junctions for conducting high transient currents, offer desirable  
electrical characteristics for board level protection, such as fast response time, lower  
operating voltage, lower clamping voltage and no device degradation when compared to  
MLVs. The PTVSHC1DF7VB protects sensitive semiconductor components from damage  
or upset due to electrostatic discharge (ESD) and other voltage induced transient events.  
The PTVSHC1DF7VB is available in a SOD-123FL package with working voltages of 7volt.  
It is used to meet the ESD immunity requirements of IEC 61000-4-2, Level 4 (±15kV air,  
±8kV contact discharge)  
Feature  
Applications  
¾
¾
¾
¾
¾
¾
¾
¾
Cell phone handsets and accessories  
Personal digital assistants (PDA’s)  
Notebooks, desktops, and servers  
Portable instrumentation  
Cordless phones  
¾
¾
¾
¾
¾
¾
¾
2200W Peak pulse power per line (tP = 8/20μs)  
SOD-123FL package  
Response time is typically < 1 ns  
Protect one I/O or power line  
Low clamping Voltage  
Digital cameras  
RoHS compliant  
Peripherals  
Transient protection for data lines to IEC 61000-4-2(ESD)  
±15KV(air), ±8KV(contact); IEC 61000-4-4 (EFT) 40A (5/50ns)  
MP3 players  
Mechanical Characteristics  
¾
¾
¾
¾
¾
¾
Lead finish:100% matte Sn(Tin)  
Mounting position: Any  
Qualified max reflow temperature:260  
Device meets MSL 2 requirements  
Pure tin plating: 7 ~ 17 um  
Pin flatness:3mil  
Rev.06  
1
ESD Protector  
PTVSHC1DF7VB  
Electronics Parameter  
Symbol  
Parameter  
I
IPP  
VRWM  
IR  
Peak Reverse Working Voltage  
Reverse Leakage Current @ VRWM  
Breakdown Voltage @ IT  
Test Current  
VBR  
IT  
IT  
IR  
V
VC VBRVRWM  
IR  
IT  
VRWM VBR VC  
IPP  
Maximum Reverse Peak Pulse Current  
Clamping Voltage @ IPP  
Peak Pulse Power  
VC  
PPP  
CJ  
IPP  
Junction Capacitance  
Electrical characteristics per line@25( unless otherwise specified)  
Parameter  
Peak Reverse Working Voltage  
Breakdown Voltage  
Symbol  
Conditions  
Min.  
Typ.  
Max.  
Units  
VRWM  
VBR  
IR  
7
V
V
It =1mA  
7.8  
Reverse Leakage Current  
Clamping Voltage  
VRWM =7V  
1
μA  
V
VC  
IPP=80A tP = 8/20μs  
VR=0V f = 1MHz  
14.8  
480  
Junction Capacitance  
Cj  
490  
pF  
Absolute maximum rating@25℃  
Rating  
Peak Pulse Power ( tP = 8/20μS )  
Lead Soldering Temperature  
Operating Temperature  
Symbol  
Ppp  
Value  
Units  
2200  
W
TL  
260 (10 sec)  
-55 to +125  
-55 to +150  
TJ  
Storage Temperature  
TSTG  
Rev.06  
2

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