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用于半导体激光器的大电流纳秒级窄脉冲驱动电路
资料介绍
根据脉冲式半导体激光器对功率、脉宽、上升沿的要求,同时考虑电脉冲的注入便于测试激光器的各种性能,提出了一种以金属氧化物半导体场效应晶体（MOSFET）为开关器件,以雪崩晶体管为驱动器,可产生大电流、窄脉宽、陡上升沿脉冲的激光器驱动电路.讨论了预触发脉冲宽度和雪崩晶体管输出负载对MOSFET输出脉冲在幅度和波形上的影响以及如何通过调整耦合电阻来控制脉冲的“下冲”和振荡.实验结果表明：在0～200 V供电电压下,该电路在1Ω电阻上产生了从0A到148 A,具有陡上升/下降沿的10 ns级电脉冲.通过调整电路参数,可输出脉冲宽度窄至8.6 ns,幅度达到124 A的电脉冲.该驱动电路满足了脉冲式半导体激光器的工作要求和对器件测试的要求.
According to the requirements of pulse semiconductor lasers for peak powers,pulse widths and rising edges and considering the test behaviors of semiconductor lasers,a driving circuit for the semiconductor lasers with large current outputting,narrower widths and sharp edges was proposed.The circuit used a Metal Oxide Semiconductor Field Effect Transistor（MOSFET） as a switch device and a avalanche transistor as a driver to generate the large current pulse with sharp edge and narrow width.The effect of the pre-trigger pulse width and output load of the avalanche transistor on the amplitude and waveform of MOSFET output pulse ...
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| 文件名 | 大小 |
| 用于半导体激光器的大电流纳秒级窄脉冲驱动电路.pdf | 475K |
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