6ED003L06-F Application Note

Gate Drive IC for three phase converters - Technical Description

Overview 1.1 Features • Thin-film-SOI-technology • Insensitivity of the bridge output to negative transient voltages up to -50V given by SOI-technology • Maximum blocking voltage +600V • Power supply of the high side drivers via boot strap • Separate control circuits for all six drivers • CMOS and LSTTL compatible input (negative logic) • Signal interlocking of every phase to prevent cross-conduction • Detection of over-current and under-voltage supply • 'shut down' of all switches during error conditions • externally programmable delay for fault clear after over current detection 1.2 Description The device 6ED003L06-F is a full bridge driver to control power devices like MOS-transistors or IGBTs in 3- phase systems with a maximum blocking voltage of +600V. Based on the used SOI-technology there is an excellent ruggedness on transient voltages. No parasitic thyristor structures are present in the device. Hence, no parasitic latch up may occur at all temperature and voltage conditions. Figure 1: Typical Application The six independent drivers are controlled at the low-side using CMOS resp. LSTTL compatible signals, down to 3.3V logic. The device includes an under-voltage detection unit with hysterese characteristic and an over-current detection. The over-current level is adjusted by choosing the resistor value and the threshold level at pin ITRIP. Both error conditions (under-voltage and over-current) lead to a definite shut-down off all six switches. An error signal is provided at the FAULT open drain output pin. The blocking time after overcurrent can be adjusted with an RC-network at pin RCIN. The input RCIN owns an internal current source of 2.8 µA. Therefore, the resistor RRCIN is optional. The minimum output current can be given with 120mA for pullup and 250mA for pull down. Because of system safety reasons a 380ns interlocking time has been realised. The function of input EN can optionally be extended with an over-temperature detection, using an external NTC-resistor (see Fig.1). There are parasitic diode structures between pins VCC and VBx due to the monolithic setup of the IC, but external bootstrap diodes are still mandatory. 2 Pin Configuration and Description