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MOC3063M 手册，一颗做鼠标的光电IC
资料介绍
这是一颗做鼠标的光电IC，成本便宜，效果还不错。
部分文件列表
| 文件名 | 大小 |
| MOC3063M_PDF_C8920_2014-09-24.pdf | 276K |
部分页面预览
（完整内容请下载后查看）September 2010
MOC3061M, MOC3062M, MOC3063M,
MOC3162M, MOC3163M
6-Pin DIP Zero-Cross Phototriac Driver Optocoupler
(600 Volt Peak)
Features
Description
■ Simplifies logic control of 115/240 VAC power
■ Zero voltage crossing
The MOC306XM and MOC316XM devices consist of a
GaAs infrared emitting diode optically coupled to a
monolithic silicon detector performing the function of a
zero voltage crossing bilateral triac driver. They are
designed for use with a triac in the interface of logic sys-
tems to equipment powered from 115/240 VAC lines,
such as solid-state relays, industrial controls, motors,
solenoids and consumer appliances, etc.
■ dv/dt of 1000V/µs guaranteed (MOC316X-M),
– 600V/µs guaranteed (MOC306X-M)
■ VDE recognized (File # 94766)
– ordering option V (e.g., MOC3063V-M)
■ Underwriters Laboratories (UL) recognized
(File #E90700, volume 2)
Applications
■ Solenoid/valve controls
■ Static power switches
■ Temperature controls
■ AC motor starters
■ Lighting controls
■ AC motor drives
■ E.M. contactors
■ Solid state relays
Schematic
Package Outlines
ANODE 1
6 MAIN TERM.
CATHODE
N/C
NC*
2
3
5
4
ZERO
CROSSING
CIRCUIT
MAIN TERM.
*DO NOT CONNECT
(TRIAC SUBSTRATE)
©2005 Fairchild Semiconductor Corporation
MOC306XM, MOC316XM Rev. 1.0.4
Absolute Maximum Ratings (T = 25°C unless otherwise noted)
A
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
Parameters
Device
Value
Units
TOTAL DEVICE
T
Storage Temperature
All
All
All
All
All
-40 to +150
-40 to +85
260 for 10 sec
-40 to +100
7500
°C
°C
STG
T
Operating Temperature
OPR
T
Lead Solder Temperature
Junction Temperature Range
°C
SOL
T
°C
J
(1)
V
Isolation Surge Voltage
Vac(pk)
ISO
(peak AC voltage, 60Hz, 1 sec. duration)
Total Device Power Dissipation @ 25°C Ambient
Derate above 25°C
P
All
250
mW
D
2.94
mW/°C
EMITTER
I
Continuous Forward Current
Reverse Voltage
All
All
All
60
6
mA
V
F
V
P
R
D
Total Power Dissipation @ 25°C Ambient
Derate above 25°C
120
1.41
mW
mW/°C
DETECTOR
V
Off-State Output Terminal Voltage
All
All
600
1
V
A
DRM
TSM
I
Peak Repetitive Surge Current
(PW = 100µs, 120pps)
P
Total Power Dissipation @ 25°C Ambient
Derate above 25°C
All
150
mW
D
1.76
mW/°C
Note:
1. Isolation surge voltage, V , is an internal device dielectric breakdown rating. For this test, Pins 1 and 2 are
ISO
common, and Pins 4, 5 and 6 are common.
©2005 Fairchild Semiconductor Corporation
MOC306XM, MOC316XM Rev. 1.0.4
2
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