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LQ20N200CQ-汽车

更新时间:2019-09-26 15:05:34 大小:508K 上传用户:21ic子站宣传员查看TA发布的资源 标签:Qspeed汽车认证二极管 下载积分:0分 评价赚积分 (如何评价?) 打赏 收藏 评论(0) 举报

资料介绍

用于音频汽车应用的200 V,20 A共阴极二极管


部分文件列表

文件名 大小
lq20n200cq_datasheet.pdf 508K

部分页面预览

(完整内容请下载后查看)
LQ20N200CQ  
QspeedAutomotive Family  
200 V, 20 A Common-Cathode Diode for  
Audio Automotive Applications  
Product Summary  
General Description  
This device has the lowest QRR of any 200 V  
Silicon diode. Its recovery characteristics  
increase efficiency, reduce EMI and eliminate  
snubbers.  
IF(AVG) per diode  
10  
A
V
VRRM  
200  
48.4  
3.29  
0.34  
QRR (Typ at 125 °C)  
IRRM (Typ at 125 °C)  
Softness tb/ta (Typ at 125 °C)  
nC  
A
Applications  
Automotive  
AEC-Q101 qualified  
Pin Assignment  
Fab, assembly and test certified to IATF 16949  
ESD HBM classification H0  
Features  
Low QRR, Low IRRM, Low tRR  
Soft recovery  
TO-252 DPAK  
LQ20N200CQ  
Benefits  
Increases efficiency  
Eliminates need for snubber circuits  
Reduces EMI filter component size and count  
Enables extremely fast switching  
A1  
K
A2  
RoHS Compliant  
Package uses Lead-free plating and “Green” mold  
compound Halogen free per IEC 61249-2-21.  
Absolute Maximum Ratings  
Absolute maximum ratings are the values beyond which the device may be damaged or have its useful life impaired. Functional  
operation under these conditions is not implied.  
Symbol Parameter  
Conditions  
Rating  
Units  
VRRM  
Peak repetitive reverse voltage  
TJ = 25 °C  
200  
10  
V
A
A
A
IF(AVG)  
Average forward current  
Per Diode, TJ = 150 °C, TC = 124 °C  
Per Device, TJ = 150 °C, TC = 124 °C  
Per Diode, 60 Hz, ½ cycle  
20  
IFSM  
IFSM  
Non-repetitive peak surge current  
Non-repetitive peak surge current  
100  
Per Diode, ½ cycle of t = 28 µs  
Sinusoid, TC = 25 °C  
350  
A
TJ  
Operating junction temperature range  
Storage temperature  
–40 to 150  
–55 to 150  
300  
°C  
°C  
°C  
W
TSTG  
Lead soldering temperature  
Power dissipation  
Leads at 1.6mm from case, 10 sec  
TC = 25 °C  
PD  
41.7  
Thermal Resistance  
Symbol Resistance from:  
Conditions  
Rating  
Units  
Per Diode  
Per Device  
3.0  
1.5  
°C/W  
°C/W  
RθJC  
Junction to case  
www.power.com  
March 2019  

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