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sony CMOS传感器 IMX323LQN-C Datasheet
资料介绍
SONY CMOS Sensor IMX323 DATASHEET,工规安防摄像机图像传感器，也可用于车载后安装摄像头!
部分文件列表
| 文件名 | 大小 |
| IMX323LQ-C.pdf | 1M |
部分页面预览
（完整内容请下载后查看）Diagonal 6.23 mm (Type 1/2.9) CMOS Image Sensor with Square Pixel for Color
Cameras
IMX323LQN-C
Preliminary
Description
The IMX323LQN-C is a diagonal 6.23 mm (Type 1/2.9) CMOS active pixel type image sensor with a square pixel
array and approximately 2.12 M active pixels. This chip operates with analog 2.7 V, digital 1.2 V, and interface 1.8 V
triple power supplies. High sensitivity, low dark current and no smear are achieved through the adoption of R, G and
B primary color pigment mosaic filters. This chip features an electronic shutter with variable integration time.
(Applications: Consumer use drive recorder, Consumer use network camera)
Features
◆CMOS active pixel type dots
◆Input clock frequency: 37.125 MHz
◆Readout mode
HD1080 p mode
HD720 p mode
◆Variable-speed shutter function (Minimum unit: One horizontal sync signal period (1XHS))
◆H driver, V driver and serial communication circuit on chip
◆DCK sync mode supported
◆CDS/PGA on chip
0 dB to 21 dB:
Analog Gain 21 dB (step pitch 0.3 dB)
21.3 dB to 45 dB:
Analog Gain 21 dB + Digital Gain 0.3 to 24 dB (step pitch 0.3 dB)
◆10-bit / 12-bit A/D converter on-chip
◆CMOS logic parallel SDR Data-Clock output
◆R, G, B primary color pigment mosaic filters on chip
◆Recommended lens F value: 2.8 or more (close side)
◆Recommended exit pupil distance: –30 mm to –∞
Sony reserves the right to change products and specifications without prior notice.
This information does not convey any license by any implication or otherwise under any patents or other right.
Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for
any problems arising out of the use of these circuits.
Rev.0.2
1
IMX323LQN-C
Device Structure
◆CMOS image sensor
◆Image size
Diagonal 6.23 mm (Type 1/2.9)
◆Total number of pixels
2001 (H) × 1121 (V) approx. 2.24 M pixels
◆Number of effective pixels
1985 (H) × 1105 (V) approx. 2.19 M pixels
◆Number of active pixels
1936 (H) × 1097 (V) approx. 2.12 M pixels
◆Number of recommended recording pixels
1920 (H) × 1080 (V) approx. 2.07 M pixels
◆Unit cell size
2.8 µm (H) × 2.8 µm (V)
◆Optical black
Horizontal (H) direction:
Vertical (V) direction:
Front 16 pixels, rear 0 pixels
Front 16 pixels, rear 0 pixels
◆Dummy
Horizontal (H) direction:
Vertical (V) direction:
Front 0 pixels, rear 0 pixels
Front 7 pixels, rear 0 pixels
◆Substrate material
Silicon
Absolute Maximum Ratings
Supply voltage (analog 2.7 V)
Supply voltage (digital 1.2 V)
Supply voltage (digital 1.8 V)
Input voltage (digital)
AVDD
DVDD
OVDD
VI
–0.3 to +3.3
V
V
–0.3 to +2.0
–0.3 to +3.3
V
–0.3 to OVDD +0.3
–0.3 to OVDD +0.3
–30 to +75
V
Output voltage (digital)
VO
V
Guaranteed Operating temperature
Guaranteed storage temperature
Guaranteed performance temperature
Topr
Tstg
Tspc
˚C
˚C
˚C
–40 to +80
–10 to +60
Recommended Operating Conditions
Supply voltage (analog 2.7 V)
Supply voltage (digital 1.2 V)
Supply voltage (digital 1.8 V)
Input voltage (digital)
AVDD
DVDD
OVDD
VI
2.7 ± 0.1
1.2 ± 0.1
V
V
V
V
V
1.8 ± 0.1
–0.1 to OVDD+0.1
–0.1 to OVDD+0.1
Output voltage (digital)
VO
2
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