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碳化硅MOSFET桥臂电路串扰抑制方法

更新时间:2020-07-22 01:01:16 大小:386K 上传用户:zhiyao6查看TA发布的资源 标签:碳化硅mosfet 下载积分:5分 评价赚积分 (如何评价?) 打赏 收藏 评论(0) 举报

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与硅MOSFET相比,碳化硅MOSFET更加有利于满足变换器高效率、高功率密度和高可靠性的发展要求。然而在桥臂电路中,上下管之间的串扰问题严重限制了碳化硅MOSFET性能优势的发挥。本文在分析了串扰问题产生机理的基础上,采用了一种改进的基于PNP三极管的有源密勒箝位方法,对串扰进行了有效抑制,并搭建了双脉冲测试平台进行实验验证。实验结果表明,改进的方法能够获得较好的串扰抑制效果,对碳化硅MOSFET的驱动电路设计具有一定指导意义。

Compared with silicon( Si) MOSFET,silicon carbide( Si C) MOSFET is more conducive to meet the requirements of power electronic converters towards high efficiency,high power density and high reliability. However,the crosstalk between the upper and lower switch limits the Si C MOSFET performance in phase-leg configuration. Based on analyses of crosstalk mechanism,this paper uses an improved method of active Miller clamp based on PNP transistor for crosstalk suppression. A double-pulse test prototype is also built to verify the theoretical explanation. As is shown by the experimental results,the improved method achieves good effect in crosstalk suppression and provides guide in design of gate driver for Si C MOSFET in phase-l...

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碳化硅MOSFET桥臂电路串扰抑制方法.pdf 386K

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