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Ka波段单片自偏压低噪声放大器
资料介绍
本文介绍了一款基于0.15μm PHEMT工艺的Ka波段自偏压单片低噪声放大器(LNA)。该款低噪声放大器采用四级级联的电路结构,前两级采用源极电感负反馈同时获得较好的输入驻波和噪声;采用电阻自偏压技术,单电源供电,使用方便。该款低噪声放大器在26~40GHz频段内增益为22±1dB,噪声优于3dB;在36GHz处噪声优于2.5dB。芯片尺寸为2.0mm×1.0mm×0.1mm。
A Ka-band monolithic self-biased low noise amplifier(LNA)fabricated on 0.15 um pHEMT process was proposed.It consisted of four stages,the two initial of which applied source feed inductors to get a good input VSWR and noise figure simultaneously.Applying self-bias resistance technology,the LNA can be supported by a single power supply.The gain of the LNA is22±1dB;the achieved noise figure(NF)is less than 3dB from 26~40GHz;and the NFis2.5dB at 36 GHz.The chip size is 2.0mm×1.0mm×0.1mm.
部分文件列表
| 文件名 | 大小 |
| Ka波段单片自偏压低噪声放大器.pdf | 854K |
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