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IGBT功率模块主电路杂散参数提取及分析
资料介绍
提取母排的分布参数,建立等效电路模型,是母排分析和设计的基础。此处通过对母排参数进行提取,得到母排的杂散参数和等效电路。搭建了绝缘栅双极型晶体管(IGBT)行为模型,对母排等效电路进行仿真验证。最后将仿真结果与实验结果进行对比,验证仿真模型的有效性。
The extraction of the parameter of busbar and the model establishment of equivalent circuit are the basic of busbar analyse and design.The stray inductance of busbar is important to the transit behavior of insulated gate bipolar transistor (IGBT).The busbar model and IGBT behavioral model are built in here.Then the switching characters of the busbar and IGBT are analyzed.Finally, the simulation and experimental result in this paper are compared to validate the design.
部分文件列表
| 文件名 | 大小 |
| IGBT功率模块主电路杂散参数提取及分析.pdf | 2M |
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