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基于射频单电子晶体管的超灵敏电荷计的数值分析
资料介绍
集成单电子晶体管SET(Single Electron Transistor)与射频共振电路的射频单电子晶体管RF SET(Radio FrequencySingle Electron Transistor)是一种高速高灵敏的电荷计。通过建立RF SET的等效电路模型,对共振电路及其与射频传输线的集成进行模拟分析,得到了SET阻抗的最佳匹配,获得了所需的谐振频率、品质因子和对SET阻抗的灵敏度。结果表明,受电荷调制的SET阻抗直接影响着共振电路的品质因子、阻抗和射频透射/反射系数。射频信号随着SET的阻抗降低而减小,峰位基本不变。在SET阻抗小于200 kΩ时,共振信号幅度随阻抗的变化率较大。透射式与反射式两种结构相比,前者共振频率及品质因子更高,后者则具有更高的灵敏度优势。
By integrating a single electron transistor(SET)with a radio resonance circuit,the radio frequency singleelectron transistor(RF SET)can be used as an extremely sensitive and ultra high-speed electrometer. In this work,the equivalent circuit model of RF SET is established. The resonance circuit and the integration with the RF transmis-sion line are investigated. The optimum matching of the SET impedance,resonant frequency,quality factor and thesensitivity of the SET impedance are obtained. Results indicate that the charge-induced impedance of the SET has di-rect impacts on the quality factor,impedance...
部分文件列表
文件名 | 大小 |
基于射频单电子晶体管的超灵敏电荷计的数值分析.pdf | 299K |
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