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基于1ED020I12-FA的IGBT栅极驱动电路应用研究
资料介绍
针对现有栅极驱动芯片M57962L体积大、环境适应性差的问题,经过深入调研,选用1ED020I12-FA栅极驱动芯片代替M57962L。设计基于该芯片的新型功率驱动电路,并对其栅极驱动性能、过流保护、故障恢复、功率消耗等性能进行了试验研究。试验结果表明基于1ED020I12-FA的新型驱动电路具有开关速度快、体积小、功耗低、温度范围宽的优点,可以替代现有驱动电路。
Considered with the problem of big capacity and bad environmental adaptation of gate driver M57962,the diver has to be replaced by 1ED020I12-FA of Infinoen Corporation in this paper.A new gate driving circuit based on 1ED020I12-FA was designed.Some experiments,such as the gate driving performance,over-current protection,failure recovery,power consumption,were done.The experiments results indicate that the gate driver circuit with 1ED020I12-FA has more advantages for faster switching speed,lower capacity and power consumption,and lager range of working temperature and can replace the existing circuit.
部分文件列表
| 文件名 | 大小 |
| 基于1ED020I12-FA的IGBT栅极驱动电路应用研究.pdf | 259K |
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