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LMG3410 600-V 12-A Integrated GaN Power Stage
资料介绍
The LMG3410 Single-Channel Gallium-Nitride (GaN) Power Stage contains a 70-mΩ, 600-V GaN power transistor, an optimized driver, and built-in protection, in a low inductance 8-mm by 8-mm QFN package. The LMG3410 power stage coupled with TI's analog and digital power-conversion controllers enables designers to create smaller, more efficient and higher-performing designs compared to silicon FETbased solutions.
部分文件列表
| 文件名 | 大小 |
| 1535095896LMG3410 600-V 12-A Integrated GaN Power Stage (1).pdf | 1M |
全部评论(1)
2018-08-27 07:56:42blust5
谢谢分享！！