推荐星级：
- 1
- 2
- 3
- 4
- 5
基于Saber的IGBT逆变桥无损缓冲电路的仿真分析
资料介绍
IGBT（绝缘栅双极型晶体管）缓冲电路对抑制IGBT开关过程中产生的尖峰电压具有重要作用。本文通过分析无损缓冲电路的原理及特点,结合原有RCD缓冲电路,探索研究了一种新的适用于IGBT逆变桥的无损缓冲电路,并采用Saber软件对两种电路进行了仿真分析,对比比较了两种缓冲吸收电路的优缺点。仿真结果验证了新无损缓冲电路抑制IGBT关断过电压的可靠性。
The turn-off reliability of IGBT （ Insulated gate bipolar transistor ） is very important for the inhibition of peak voltage which is produced by the IGBT switching process. This paper analyzes the principle and characteristics of Iossless snubber circuit, and combines with the original RCD snubber circuit, Explores and researches a circuit which is suitable for IGBT inverter bridge Iossless snubber. Simulates and analysises the circuit by the Saber software. The simulation results showed the turn-off reliability of inhibite this circuit over-voltage of IGBT.
部分文件列表
| 文件名 | 大小 |
| 基于Saber的IGBT逆变桥无损缓冲电路的仿真分析.pdf | 502K |
全部评论(0)