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基于p-GaN结构的GaN HEMT功率电子器件和数字电路单片集成技术
资料介绍
基于含p-GaN帽层的Si基GaN材料,实现了增强型GaN功率电子器件与数字电路单片集成技术的开发。在同一片晶圆上实现了增强型高压GaN器件、DCFL结构反相器和17级环形振荡器。高压GaN功率电子器件阈值电压VTH达到1.2V,击穿电压VBD达到700V,输出电流ID达到8A,导通电阻RON为300mΩ。基于E/D集成技术的DCFL结构反相器低噪声和高噪声容限分别为0.63V和0.95V;所研制17级环形振荡器在输入6V条件下振荡频率345MHz,级延时为85ps。
GaN power electronic devices and digital circuits were fabricated on Si-based GaN material with p-GaN cap monolithically. An enhancement-mode GaN power device with high breakdown voltage, a direct-coupled FET logic(DCFL) inverter and a 17-stage ring oscillator were realized on one same wafer. The threshold voltage VTH, breakdown voltage VBD, output current ID and on-resistance RON of the GaN HEMT were 1.2 V, 700 V, 8 A, and 300 mΩ, respectively. The DCFL inverter was realized based on the enhancement- and depletion-mode integration technology, and its logic-low and logic-high noise margins were 0.63 V and 0.95 V, respectively. The 17-stage ring oscillator showed an oscillation frequency of 435 MHz and a propagation delay of 85 ps at a supply voltage of 6 V.
部分文件列表
| 文件名 | 大小 |
| 基于p-GaN结构的GaN_HEMT功率电子器件和数字电路单片集成技术.pdf | 484K |
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