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一种无升压结构的MOSFET栅极驱动电路
资料介绍
针对双极型步进电机控制芯片,设计了无升压结构的MOSFET栅极驱动电路,简化电路结构,利用缓冲电路防止振荡和直通,获得合适的开关时间;基于0.35μm BCD工艺参数,运用HSPICE仿真软件进行仿真,结果表明电路开关速快,功耗较低,满足设计要求.
A driver circuit of power MOSFET for bipolar stepper motor without boost structure was designed to simplify circuit. The drive resistance was applied to reduce the oscillation and the short circuit problem of the gate of MOSFET, and the suitable time of turn on and off was gained. The HSPICE simulation resuhs through the 0.35 μm BCD technology were given here. The results of experiment show that the circuit can reduce the power dissipation and improve the working fre- quence, and meet the MOSFET driving requirement perfectly.
部分文件列表
| 文件名 | 大小 |
| 一种无升压结构的MOSFET栅极驱动电路.pdf | 220K |
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