MOS场效应管特性与参数测试实验电路设计

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场效应管（简称FET）是一种由输入电压来控制其输出电流大小的半导体器件,是电压控制器件,其输入电阻非常高,输入端基本不取电流.由于金属一氧化物一半导体场效应管（简称MOSFET ）栅极和沟道之间的绝缘层易被电压击穿,特别是栅源之间的耐压只有几十伏,外部静电电压极易造成栅源极间击穿损坏.文章针对MOSFET在实验教学测量、测试过程中容易损坏的问题,根据MOSFET工作特性及测试要求,设计出较为便捷和安全可靠的MOSFET实验教学电路.

Field effect transistor （FET） is a semiconductor device that controls the output current by the inputvoltage. It is a voltage control device with very high input resistance, and the input end does not take the basicinput current. As the metal oxide semiconductor field effect transistor （MOSFET） between the gate andthe channel of the insulation layer is easy to be broken down by voltage. Particularly, when the voltage betweengate and source is only tens of volts, it is extremely easy to cause the external electrostatic voltage betweenthe gate source to break down. A more convenient and reliable MOSFET experiment teaching circuit isdesigned according to the MOSFET measuring and testing process to overcome the problem of eas...