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IR全桥驱动
资料介绍
The gate drive requirements for a power MOSFET or IGBT uti-
lized as a high side switch (drain connected to the high voltage rail, as shown in Figure 1) driven in full enhancement, i.e., lowest voltage drop across its terminals, can be summarized as follows:
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Gate voltage must be 10-15V higher than the drain voltage. Being a high side switch, suchgate voltage would have to be higher than the rail voltage, which is frequently the highest volt-
age available in the system.
The gate voltage must be controllable from thelogic, which is normally referenced to ground.
Thus, the control signals have to be level-shifted to the source of the high side power device, which, in most applications, swings between the two rails.
The power absorbed by the gate drive circuitry should not significantly affect the overall effi-
ciency.
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With these constraints in mind, several techniques are presentlyused to perform this function, as shown in principle in Table I.
Each basic circuit can be implemented in a wide variety of con-
figurations.
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