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全控型器件串联IGBT在吸收电路中均压效果分析

更新时间:2020-10-27 18:08:31 大小:1M 上传用户:gsy幸运查看TA发布的资源 标签:串联igbt 下载积分:1分 评价赚积分 (如何评价?) 打赏 收藏 评论(0) 举报

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针对IGBT串联阀运行过程分压不均衡,从IGBT器件原理上分析了影响串联分压不均衡的因素。采用RCD无源吸收回路减缓关断过程中dv/dt以抑制过电压,从均压效果和IGBT关断时间两方面对均压电容取值进行了分析,并对实验波形从理论上进行了分析。实验结果表明在门极驱动信号同步情况下,RCD吸收回路可有效抑制关断过程过电压。

In view of the unbalanced pressure distribution during the operation of IGBT series valves,the factors affecting unbalanced pressure distribution in series are analyzed from the principle of IGBT dv/dt of RCD passive absorption circuit is used to reduce the over-voltage during voltage-equalizing capacitance is analyzed from two aspects of voltage-equalizing effect and IGBT switching-off time,and the experimental waveform is analyzed experimental results show that the RCD absorption circuit can effectively suppress the switching overvoltage when the gate driving signal is synchronized.

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全控型器件串联IGBT在吸收电路中均压效果分析.pdf 1M

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