基于双-双指数电流源法的CMOS电路单粒子效应电路级仿真

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基于瞬时电流模型,采用双-双指数电流源法,在65nm工艺节点集成电路基本单元中开展了单粒子效应的电路级仿真。采用器件/电路混合仿真的方式,提取瞬时电流特征参数,在目标电路敏感节点插入内建电流源表征单粒子效应对电路的影响;对组合逻辑电路中产生的单粒子瞬态脉冲及存储单元的单粒子翻转效应进行了电路级仿真计算,并将计算结果与用TCAD模型计算的结果进行了对比检验。结果表明:双-双指数电流源法可对不同驱动能力和不同负载条件下的基本单元电路进行仿真,且易于向大规模电路进行推广,在空间单粒子软错误评估中具有应用价值。

Based on the transient current model,an improved dual-double exponential current source method is presented to capture the dynamic charge collection signatures observed in the single event response of 65 nm CMOS circuitry.The characteristic time constants of the transient model are extracted by the technology computer aided design(TCAD)mixed-mode simulation of a single transistor and an inverter.The single-event transient pulse generated in combinatorial logic circuit and the single-event upset effect of storage unit are calculated by circuit-level simulation method,and compared with TCAD model.The results show that the dual-exponential current source method gives an accurate prediction of the pulse width for various library cells with different driving capabilities and load conditions,and it is easy to be extended to large-scale circuits which can be used in single event soft error evaluation.