抗辐照CMOS放大器集成电路设计技术（英文）

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抗辐射CMOS放大器集成电路作为航天器的核心应用元器件越来越多用在宇航领域。为了更好地研究宇宙辐射环境中航天器抗辐照CMOS放大器集成电路性能和各种效应,并在太空辐射所产生机制的基础上,从工艺和设计方面提出了抗辐照CMOS放大器集成电路抗辐照加固设计方法。在太空环境中,航天器中的集成电路存在CMOS元器件的线性跨导gm减小、阈值电压偏离、转角1/f噪声幅值增加和衬底的漏电流增加。所以提出了新的抗辐照CMOS放大器集成电路的抗辐照集成电路的加固方法。通过该设计方法研制了抗辐照CMOS放大器集成电路,经过测试验证满足航天应用的要求。

As CMOS amplifier radiation harden circuit has been more and more utilized in the domain of aerospace.For the purpose of better researching characteristics of efficacy-losing the CMOS amplifier radiation harden circuit radiated in the space,meeting the requirement of radiation hardening in the way of designing new CMOS amplifier radiation harden circuit.The new radiation harden differential circuit stiucture design and hardened layout design was carried out with treatment,which was applied in CMOS amplifier radiation harden circuit,and solved the CMOS semiconductor components of threshold voltage deviation,transdiode decreasing,substrate leakage current increasing.The resul...