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温度循环应力下模拟IC封装失效的加速退化研究
资料介绍
针对模拟集成电路在温度循环应力下的封装退化过程进行了研究。设计了对应的加速退化试验,并根据其加速应力模型拟合分析了试验数据,得到了加速退化方程,推算出了日常应用条件下器件的贮存寿命。
The packaging degradation process of analog integrated circuits under temperature cycling stress is studied,and the corresponding accelerated degradation testing is designed.According to its accelerated stress model,the test data are fitted and analyzed,and the accelerated degradation equation is obtained.Based on this,the storage life of the device under daily application conditions is derived.
部分文件列表
| 文件名 | 大小 |
| 温度循环应力下模拟IC封装失效的加速退化研究.pdf | 694K |
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