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电路中的拓扑态
资料介绍
利用凝聚态物理中紧束缚哈密顿量与集中参数电子线路中基尔霍夫方程的对应关系,可以在电子线路中设计出种类丰富的拓扑物态.本文详细介绍用电路实现一维SSH模型、三维结线半金属模型和外尔半金属模型的设计方案.在上述拓扑电路中可探测到端点态、表面鼓膜态、表面费米弧等体拓扑性质对应的界面态.由于电子线路对应的紧束缚哈密顿量中的跃迁项具有丰富的调控自由度,如强度、距离、维度等,容易推广到非厄密系统以及四维或更高维度的系统,使得人们能在电路中设计和验证传统凝聚态体系中难以实现或无法实现的新物态.此外,电子线路具备器件功能多样、制备工艺成熟可靠等优势,为探索新奇物态提供了一个便利的实验平台.
Based on the correspondence between tight-binding Hamiltonian in condensed matter physics and the Kirchhoff’s current equations in lumped parameters circuits,profuse topological states can be mapped from the former to the latter.In this article,the electric-circuit realizations of 1 D SSH model,3 D nodal-line and Weyl semimetals are devised and elaborated,in which the edge states,surface drum-head and Fermi-arc states are appearing on the surface of the circuit lattice.Of these circuits,the effective hopping terms in Hamiltonian have high degree of freedom.The hopping strength,distance and dimension are easy to tune,and therefore our design is convenient to be extended to non-Hermitian and four or higher dimensional cases,making the fancy states that hard to reach in conventional condensed matter now at our fingertips.Besides,the electric circuit has the advantage of plentiful functional elements and mature manufacture techniques,thus being a promising platform to explore exotic states of matter.
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| 文件名 | 大小 |
| 电路中的拓扑态.pdf | 2M |
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