一种荷控忆容器的电路模拟器设计及其基本特性分析

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直接从荷控忆容器的数学模型出发,首先采用通用有源电路芯片设计了忆容器＂浮地＂电路模拟器,之后结合Matlab和Multisim混合仿真的方法,研究了其二端口的基本电特性,给出了在不同交变信号激励以及不同参数下忆容器电路模拟器的系统级仿真实验,最后完成了其硬件电路的实现及性能测试。结果表明：所设计的荷控忆容器具有电荷-电压之间的自收缩磁滞回线特性,是一种具有记忆特性的非线性电容,这与理论概念上的忆容器特性相吻合,可为忆容器在电子学领域产生新的应用电路提供器件模拟实体。

A mathematical model of a charge-controlled memcapacitor directly from the definition was proposed, and anew floating memcapacitor emulator was implemented using common off-the-shelf components. Then the system-levelcircuit simulation experiments under different alternating signal and different parameters were presented based on Multisimand Matlab simulation platform. The implementation of the hardware circuit and the performance tests were presented. Theresults show that the charge-voltage characteristic of the designed charge-controlled memcapacitor is afrequency-dependent pinched loop, which indicats that it is a kind of nonlinear capacitor with memory and in accord withthe concept of memcapacitor. The...