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集成电路芯片的失效机理

更新时间：2019-10-31 20:03:50 大小：21M 上传用户：sun2152查看TA发布的资源 标签：集成电路 下载积分：1分 评价赚积分 （如何评价?） 打赏 收藏 评论(0) 举报

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Electromigration is the dominating failure mode of interconnects. It is characterized by the migration of metal atoms in a conductor through which large direct-current densities pass.

As IC technology increases device density, the interconnects that carry signals are consequently reduced in size, specifically, in height and cross section. This leads to extremely high current densities, on the order of at least 106 A/cm2

At these current densities, momentum transfer between electrons and metal atoms becomes important. The transfer, which is called the electron-wind force, results in a mass transport along the direction of electron movement.

Diffusion Barriers Stuffed Barriers -Impurities segregated to the grain boundaries block grain boundary diffision (e.g.

Ti(10w/o):W sputtered in nitrogen)

Passive Compound Barriers-Provide chemical inertness and negligible mutual solubility and diffusivity. (e.g. TiN)

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