- 1
- 2
- 3
- 4
- 5
CMOS图像传感器光导通路的工艺开发
资料介绍
开发了CMOS图像传感器的光导通路工艺。通过使用优化的沟槽刻蚀工艺和光导通路线宽,在保持暗电流不变的情况下大幅提升了像素单元的灵敏度。研究发现,光导通路线宽直接影响暗电流的大小,线宽过大造成的金属玷污直接影响像素单元的暗电流。综合考虑灵敏度、暗电流和工艺偏差,光导通路线宽设置为4μm,其在保证暗电流不增加的情况下提升30%左右的灵敏度。
In this paper,the light pipe technology of CMOS image sensor has been successfully developed.By using the optimized trench etching technology and the critical dimension of the light pipe,the sensitivity of pixel unit is greatly improved while the dark current remains unchanged.Through the study we found that the critical dimension of the light pipe directly affects the dark current,wider width of the light pipe will lead to metal contamination and directly affects the dark current of pixel.Considering the sensitivity,dark current and process deviation,the line width of the photoconductive path is set to 4μm,which improves the sensitivity by about 30%without increasing dark current.
部分文件列表
| 文件名 | 大小 |
| CMOS图像传感器光导通路的工艺开发.pdf | 1M |
相关下载
- 华为模块电源管理设计指导-(V100R001_02 Chi...
- 华为LGA模块PCB设计指导_V2.0_20150126.pdf
- HUAWEI Module USB Interface Descriptor Gui...
- HUAWEI ME909s-821 LTE LGA模块硬件指南V100R...
- HUAWEI ME909s-821 LTE LGA Module Acceptanc...
- HUAWEI 30 mm x 30 mm LGA Module Hardware M...
- HUAWEI 30 mm x 30 mm LGA Module Developmen...
- Altium_Designer_规则设置三例.pdf
- STM32F407产品技术培训-DSP库及其例程
- STM32F407产品技术培训-2.浮点单元.pdf
全部评论(0)