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采用电流复用技术的8mm频段低噪声放大器
资料介绍
利用电流复用技术设计8mm频段低噪声放大器芯片，采用0．15MmGaAsPHEMT工艺，芯片尺寸为1．73mm×0．75mm×0．1mm。测试结果显示：在32-38GHz频带内，放大器增益大于21dB，噪声系数小于1．85dB，输入、输出电压驻波比小于2．5，P1dB大于7dBm，功耗5V，28mA，采用电流复用技术比传统设计的功耗降低将近40％。
An 8 mm hand low noise amplifier was designed by using current reuse technique and fabricated with 0.15 μm PHEMT process. The chip dimension is 1.73mm×0.75mm×0.1mm. The measured results from 32-38 GHz show a gain more than 21 dB, noise figure less than 1.85 dB, VSWR less than 2.5 and P1dB more than 7 dBm. The total power consumption with this technique is 5 V and 28 mA, which is about 40% lower than that of the traditional design.
部分文件列表
| 文件名 | 大小 |
| 采用电流复用技术的8mm频段低噪声放大器.pdf | 810K |
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