推荐星级：
- 1
- 2
- 3
- 4
- 5
28 nm PMOSFET器件短沟道效应机理研究与优化
资料介绍
随着MOSFET器件尺寸不断缩小,短沟道效应越来越严重。基于28 nm低功耗逻辑平台,针对PMOSFET器件短沟道效应严重的现象,借助半导体工艺及器件仿真工具TCAD,研究PMOSFET短沟道效应的产生机制。提出一种通过调整pocket离子注入工艺条件改善短沟道效应的方法。通过优化工艺条件,该方法可以在保证长沟道器件Vt不变的情况下,有效改善28 nm PMOSFET器件的短沟道效应。
With MOSFET dimension scaling down,short channel effect(SCE)is becoming more and more severe.Based on 28 nm low power logic platform,this work firstly investigated the mechanism of PMOSFET SCE by using TCAD simulation,and then proposed an optimization method by modifying the pocket implant condition.This optimization method could improve PMOSFET SCE effectively,and keep long channel device Vt constant.
部分文件列表
| 文件名 | 大小 |
| 28_nm_PMOSFET器件短沟道效应机理研究与优化.pdf | 1M |
全部评论(0)