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LQ10N200CQ-汽车
资料介绍
用于音频汽车应用的200 V,10 A共阴极二极管
部分文件列表
文件名 | 大小 |
lq10n200cq_datasheet.pdf | 473K |
部分页面预览
(完整内容请下载后查看)LQ10N200CQ
Qspeed™ Automotive Family
200 V, 10 A Common-Cathode Diode for
Audio Automotive Applications
Product Summary
General Description
This device has the lowest QRR of any 200 V
Silicon diode. Its recovery characteristics
increase efficiency, reduce EMI and eliminate
snubbers.
IF(AVG) per diode
5
A
V
VRRM
200
32.4
2.6
QRR (Typ at 125 °C)
IRRM (Typ at 125 °C)
Softness tb/ta (Typ at 125 °C)
nC
A
0.39
Applications
• Automotive
• AEC-Q101 qualified
Pin Assignment
• Fab, assembly and test certified to IATF 16949
• ESD HBM classification H0
Features
• Low QRR, Low IRRM, Low tRR
• Soft recovery
TO-252 DPAK
LQ10N200CQ
Benefits
• Increases efficiency
• Eliminates need for snubber circuits
• Reduces EMI filter component size and count
• Enables extremely fast switching
A1
K
A2
RoHS Compliant
Package uses Lead-free plating and “Green” mold
compound Halogen free per IEC 61249-2-21.
Absolute Maximum Ratings
Absolute maximum ratings are the values beyond which the device may be damaged or have its useful life impaired. Functional
operation under these conditions is not implied.
Symbol Parameter
Conditions
Rating
Units
VRRM
Peak repetitive reverse voltage
TJ = 25 °C
200
5
V
A
A
A
IF(AVG)
Average forward current
Per Diode, TJ = 150 °C, TC = 130 °C
Per Device, TJ = 150 °C, TC = 130 °C
Per Diode, 60 Hz, ½ cycle
10
60
IFSM
IFSM
Non-repetitive peak surge current
Non-repetitive peak surge current
Per Diode, ½ cycle of t = 28 µs
Sinusoid, TC = 25 °C
350
A
TJ
Operating junction temperature range
Storage temperature
–40 to 150
–55 to 150
300
°C
°C
°C
W
TSTG
Lead soldering temperature
Power dissipation
Leads at 1.6mm from case, 10 sec
TC = 25 °C
PD
27.7
Thermal Resistance
Symbol Resistance from:
Conditions
Per Diode
Rating
4.5
Units
°C/W
°C/W
RθJC
Junction to case
Per Device
2.3
www.power.com
March 2019
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