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基于Ka波段分布式MEMS移相器芯片微封装研究
资料介绍
Abstract: In this paper,a novel packaging structure model which is performed using wafer level micropackaging on the thin silicon substrate as the Ka band distributed MEMS phase shifters wafer with vertical feedthrough is presented. The RF effects of the proposed packaging structure which include substrate thickness, vertical feedthrough radius and cavity height on the per-
formance of distributed MEMS phase shifter are investigated using Microwave Studio(CST). Simulation results show that the insertion loss is less 0.55 dB, the return loss is under 12 dB, and the phase shifts have well linear relation at the Ka band when the thickness, radius and height is 450 um,50 um and 80 um, respectively. This indicated that the novel packaging structure can be used to low cost packaging for volume production of RF MEMS devices.
Key words: Ka band; MEMS phase shifter; wafer level micropackaging; thin substrate; vertical feedthrough
部分文件列表
| 文件名 | 大小 |
| 基于Ka波段分布式MEMS移相器芯片微封装研究.pdf | 532K |
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