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NPN+PNP复合三级管 PBLS6002D技术手册
资料介绍
PBLS6002D，NXP产品，汽车级电子，NPN+PNP复合三级管。
1.1 General description
PNP low V CEsat Breakthrough In Small Signal (BISS) transistor and
NPN Resistor-Equipped Transistor (RET) in a SOT457 (SC-74) small Surface Mounted
Device (SMD) plastic package.
1.2 Features
I Low V CEsat (BISS) transistor and resistor-equipped transistor in one package
I Low threshold voltage (< 1 V) compared to MOSFET
I Low drive power required
I Space-saving solution
I Reduction of component count
1.3 Applications
I Supply line switches
I Battery charger switches
I High-side switches for LEDs, drivers and backlights
I Portable equipment
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部分文件列表
| 文件名 | 文件大小 | 修改时间 |
| PBLS6002D.pdf | 255KB | 2018-08-06 20:21:52 |
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